Effect of thermal convection on liquid phase epitaxy of GaN by Na flux methodn

被引：25

作者：

Gejo, Ryohei ^{[1
]}

Kawamura, Furnio ^{[1
]}

Kawahara, Minoru ^{[1
]}

Yoshimura, Masashi ^{[1
]}

Kitaoka, Yasuo ^{[1
]}

Mori, Yusuke ^{[1
]}

Sasaki, Takatomo ^{[1
]}

机构：

[1] Osaka Univ, Div Elect Elect & Informat Engn, Suita, Osaka 5650871, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 12期

关键词：

GaN; flux method; single crystal; bulk; liquid phase epitaxy;

D O I：

10.1143/JJAP.46.7689

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In the liquid phase epitaxy (LPE) growth of GaN single crystals using the Na flux method, we achieved an increase in the growth rate and a change in the growth thickness distribution by generating thermal convection in the Ga-Na melt. The effect of thermal convection on the growth rate and growth thickness distribution became stronger with the strength of the convection, which indicates that thermal convection can produce a high dissolution rate of nitrogen gas into the melt as well as homogenize the nitrogen concentration.

引用

页码：7689 / 7692

页数：4

共 15 条

[1] Growth of GaN single crystals from a Na-Ga melt at 750°C and 5 MPa of N2 [J].

Aoki, M ;

Yamane, H ;

Shimada, M ;

Sekiguchi, T ;

Hanada, T ;

Yao, T ;

Sarayama, S ;

DiSalvo, FJ .

JOURNAL OF CRYSTAL GROWTH, 2000, 218 (01) :7-12

[2] GaN single crystal growth using high-purity Na as a flux [J].

Aoki, M ;

Yamane, H ;

Shimada, M ;

Sarayama, S ;

DiSalvo, FJ .

JOURNAL OF CRYSTAL GROWTH, 2002, 242 (1-2) :70-76

[3] Interaction of O2 with Pd single crystals in the range 1-150 Torr:: Oxygen dissolution and reaction [J].

Han, Jinyi ;

Zemlyanov, Dmitry Y. ;

Ribeiro, Fablo H. .

SURFACE SCIENCE, 2006, 600 (13) :2752-2761

[4] Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure [J].

Iwaya, M. ;

Kasugai, H. ;

Kawashima, T. ;

Iida, K. ;

Honshio, A. ;

Miyake, Y. ;

Kamiyama, S. ;

Amano, H. ;

Akasaki, I. .

THIN SOLID FILMS, 2006, 515 (02) :768-770

[5] Drastic decrease in dislocations during liquid phase epitaxy growth of GaN single crystals using Na flux method without any artificial processes [J].

Kawamura, F ;

Umeda, H ;

Kawahara, M ;

Yoshimura, M ;

Mori, Y ;

Sasaki, T ;

Okado, H ;

Arakawa, K ;

Mori, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4A) :2528-2530

[6] Growth of transparent, large size GaN single crystal with low dislocations using Ca-Na flux system [J].

Kawamura, F ;

Iwahashi, T ;

Morishita, M ;

Omae, K ;

Yoshimura, M ;

Mori, Y ;

Sasaki, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (7A) :L729-L731

[7] Growth of a large GaN single crystal using the liquid phase epitaxy (LPE) technique [J].

Kawamura, F ;

Iwahashi, T ;

Omae, K ;

Morishita, M ;

Yoshimura, M ;

Mori, Y ;

Sasaki, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (1A-B) :L4-L6

[8] Growth of a two-inch GaN single crystal substrate using the Na flux method [J].

Kawamura, Fumio ;

Umeda, Hidekazu ;

Morishita, Masanori ;

Kawahara, Minoru ;

Yoshimura, Masashi ;

Mori, Yusuke ;

Sasaki, Takatomo ;

Kitaoka, Yasuo .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (42-45) :L1136-L1138

[9] KINETIC-STUDIES ON THE DISSOLUTION OF NITROGEN INTO MOLTEN IRON BY N-14-N-15 ISOTOPE-EXCHANGE REACTION [J].

KOBAYASHI, A ;

TSUKIHASHI, F ;

SANO, N .

ISIJ INTERNATIONAL, 1993, 33 (11) :1131-1135

[10] Interfacial reaction of nitrogen with molten iron: a theoretical study [J].

Lee, J ;

Morita, K .

SCANDINAVIAN JOURNAL OF METALLURGY, 2005, 34 (02) :131-136

← 1 2 →