Polarized luminescence of defects in CuGaSe2

被引:0
作者
Siebentritt, Susanne [1 ,2 ]
Augustin, Sven [2 ]
Papathanasiou, Niklas [2 ]
Hebert, Damon [3 ]
Rockett, Angus [3 ]
Blaesing, Juergen [4 ]
Lux-Steiner, Martha Ch [2 ]
机构
[1] Univ Luxembourg, Fac Sci, 162a,Ave Faiencerie, L-1511 Luxembourg, Luxembourg
[2] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany
[3] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
[4] Otto von Guericke Univ, D-39016 Magdeburg, Germany
来源
THIN-FILM COMPOUND SEMICONDUCTOR PHOTOVOLTAICS - 2007 | 2007年 / 1012卷
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中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The linear polarisation of luminescence light allows conclusions on the symmetry of defects in semiconductors with non-cubic symmetry, like chalcopyrites, for which three shallow acceptors have been identified by photoluminescence. The polarisation dependent photoluminescence allows determination of the symmetry of the defects relative to the c-axis of the crystal. A simple geometrical model implies that chalcogen sites show a predominant direction perpendicular to the c-axis, while metal sites show a predominant direction parallel to the c-axis. Since all three shallow acceptors show polarization parallel to the c-axis, it can be concluded that they are situated on a metal site.
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页码:483 / +
页数:3
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