1.54 μm emission mechanism of Er-doped zinc oxide thin films

被引：29

作者：

Jang, Y. R. ^{[1
]}

Yoo, K. H. ^{[1
]}

Ahn, J. S. ^{[1
]}

Kim, C. ^{[1
]}

Park, S. M. ^{[2
]}

机构：

[1] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea

[2] Kyung Hee Univ, Dept Chem, Seoul 130701, South Korea

来源：

APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 07期

关键词：

ZnO; Er doping; Photoluminescence; 1.54 mu m emission; TEMPERATURE 1.54-MU-M ELECTROLUMINESCENCE; M PHOTOLUMINESCENCE; CONTAINING ZNO; LUMINESCENCE; ERBIUM; SI; GAN; SEMICONDUCTORS; FABRICATION; DEPOSITION;

D O I：

10.1016/j.apsusc.2010.10.069

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Zinc oxide (ZnO) and Er-doped zinc oxide (ZnO:Er) thin films were formed by pulsed laser deposition, and characterized by photoluminescence (PL) and X-ray diffraction (XRD) in order to clarify the 1.54 mu m emission mechanism in the ZnO:Er films. Er ions were excited indirectly by the 325 nm line of a He-Cd laser, and the comparison of the ultraviolet to infrared PL data of ZnO and ZnO:Er films showed that the 1.54 mu m emission of Er3+ in ZnO:Er film appears at the expense of the band edge emission and the defect emission of ZnO. The crystallinity of the films was varied with the substrate temperature and post-annealing, and it was found that the intensity of the 1.54 mu m emission is strongly related with the crystallinity of the films. There are three processes leading to the 1.54 mu m emission; absorption of excitation energy by the ZnO host, energy transfer from ZnO to Er ions, and radiative relaxation inside Er ions, and it is suggested that the crystallinity plays an important role in the first two processes. (C) 2010 Elsevier B. V. All rights reserved.

引用

页码：2822 / 2824

页数：3

共 27 条

[1] Photoluminesfcence of Er-doped SiO2 films containing Si nanocrystals and Er [J].