Atomic ordering and gap formation in Ag-Sb-based ternary chalcogenides

被引：138
作者：
Hoang, Khang [1 ]
Mahanti, S. D.
Salvador, James R.
Kanatzidis, Mercouri G.
机构：
[1] Michigan State Univ, Dept Phys & Astron, E Lansing, MI 48824 USA
[2] Michigan State Univ, Dept Chem, E Lansing, MI 48824 USA
来源：
PHYSICAL REVIEW LETTERS | 2007年 / 99卷 / 15期
关键词：
D O I：
10.1103/PhysRevLett.99.156403
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Novel semiconductors with tailored properties can be designed theoretically based on our understanding of the interplay of atomic and electronic structures and the nature of the electronic states near the band-gap region. We discuss here the realization of this idea in Ag-Sb-based ternary chalcogenides, which are important optical phase change and thermoelectric materials. Based on our studies we propose new systems for high-performance thermoelectrics.
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页数：4
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