Over 12000 A/cm2 and 3.2 mΩcm2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET

被引：36

作者：

Iwataki, Masayuki ^{[1
]}

Oi, Nobutaka ^{[1
]}

Horikawa, Kiyotaka ^{[1
]}

Amano, Shotaro ^{[1
]}

Nishimura, Jun ^{[1
]}

Kageura, Taisuke ^{[1
]}

Inaba, Masafumi ^{[1
]}

Hiraiwa, Atsushi ^{[2
,3
]}

Kawarada, Hiroshi ^{[1
,3
,4
]}

机构：

[1] Waseda Univ, Fac Sci & Engn, Tokyo 1698555, Japan

[2] Nagoya Univ, Inst Mat & Syst Sustainabil, Tokyo Branch, Tokyo 4648601, Japan

[3] Waseda Univ, Res Org Nano & Life Innovat, Tokyo 1620041, Japan

[4] Waseda Univ, Kagami Mem Lab Mat Sci & Technol, Tokyo 1690051, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 01期

关键词：

Diamond; MOSFET; vertical-type device;

D O I：

10.1109/LED.2019.2953693

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a miniaturized vertical-type two-dimensional hole gas (2DHG) diamond metal-oxide-semiconductor field-effect transistor (MOSFET) by adopting a gate-source overlapping structure. We developed a 2-mu m-wide trench and disposed a part of the gate electrode to overlap the Al2O3 insulator film on the source electrode to eliminate the space between source and gate electrode. We obtained the maximum drain current density of I-D = 12800 A/cm(2) at V-DS = -50 V and the specific on-resistance of R-ON = 3.2 mcm(2) at V-DS = -10 V and confirmed their improvement by the miniaturization of devices and reduction of source to gate resistance. In addition, the drain current on/off ratio was 7 orders magnitude even at 200 degrees C with the formation of a highly concentrated, thick nitrogen-doped layer as the current blocking layer.

引用

收藏

页码：111 / 114

页数：4

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