Irradiation effects in ultrathin Si/SiO2 structures

被引：10
|
作者：
Cantin, JL
von Bardeleben, HJ
Autran, JL
机构：
[1] Univ Paris 06, Phys Solides Grp, UMR CNRS 75 88, F-75251 Paris, France
[2] Univ Paris 07, Phys Solides Grp, UMR CNRS 75 88, F-75251 Paris, France
[3] Inst Natl Sci Appl, Phys Mat Lab, UMR CNRS 5511, F-69621 Villeurbanne, France
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1998年 / 45卷 / 03期
关键词：
D O I：
10.1109/23.685215
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The total dose response of Si/SiO2, structures with ultrathin (20-40 Angstrom) thermal oxide layers grown on porous silicon substrates has been studied by Electron Paramagnetic Resonance (EPR) spectroscopy. The modification of the interface defect passivation and the generation of oxide defects have been analysed as a function df dose for three series of samples with different initial hydrogen passivation states.
引用
收藏
页码：1407 / 1411
页数：5
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