In-situ measurements of internal stresses in copper thin films during thermal cycling using synchrotron X-rays

被引:0
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作者
Tanaka, K [1 ]
Akiniwa, Y [1 ]
机构
[1] Nagoya Univ, Grad Sch, Dept Mech Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using synchrotron X-rays at SPring-8, the internal stress in Cu thin films was measured in vacuum at various temperatures during heating and cooling cycle between room temperature and high temperature of 300 or 500 degrees C. Cu films with the thickness of 600 nm was sputtered on top of the under coating of TiN on Si wafer substrate. Cu thin films had a strong fiber texture with the fiber axis < 111 > perpendicular to the film surface. The 311 diffraction was used for stress measurement. In the heating process, the tensile stress was decreased from 217 MPa to -115 MPa at 180 degrees C and then stress relaxation took place at higher temperatures. The stress diminished in the film at 500 degrees C. In the cooling process, the tensile stress was built up with decreasing temperature. After one heat cycle, the residual stress was increased from 217 to 367 MPa. The experimental results were compared with the theoretical prediction based on the method proposed by Thouless et al. A good agreement was obtained between experimental and theoretical results.
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页码:69 / 73
页数:5
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