Aharonov Bohm effect in 2D topological insulator

被引：14

作者：

Gusev, G. M. ^{[1
]}

Kvon, Z. D. ^{[2
,3
]}

Shegai, O. A. ^{[2
]}

Mikhailov, N. N. ^{[2
]}

Dvoretsky, S. A. ^{[2
]}

机构：

[1] Univ Sao Paulo, Inst Fis, BR-13596017 Sao Paulo, Brazil

[2] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

[3] Novosibirsk State Univ, Novosibirsk 630090, Russia

来源：

SOLID STATE COMMUNICATIONS | 2015年 / 205卷

基金：

巴西圣保罗研究基金会;

关键词：

HGTE QUANTUM-WELLS; WEAK-LOCALIZATION; TRANSITION; TRANSPORT; CAVITIES; STATE;

D O I：

10.1016/j.ssc.2014.12.017

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present magnetotransport measurements in HgTe quantum well with inverted band structure, which expected to be a two-dimensional topological insulator having the bulk gap with helical gapless states at the edge. The negative magnetoresistance is observed in the local and nonlocal resistance configuration followed by the periodic oscillations damping with magnetic field. We attribute such behaviour to Aharonov-Bohm effect due to magnetic flux through the charge carrier puddles coupled to the helical edge states. The characteristic size of these puddles is about 100 nm. (C) 2015 Published by Elsevier Ltd.

引用

页码：4 / 8

页数：5

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