AlGaN/GaN two-dimensional electron gas metal-insulator-semiconductor photodetectors with sputtered SiO2 layers

被引：16

作者：

Chang, P. C. ^{[1
]}

Lam, K. T. ^{[2
]}

Chen, C. H. ^{[3
]}

Chang, S. J. ^{[4
,5
]}

Yu, C. L. ^{[4
,5
]}

Liu, C. H. ^{[1
]}

机构：

[1] Nan Jeon Inst Technol, Dept Elect Engn, Yenshui 73746, Taiwan

[2] Leader Univ, Dept Informat Commun, Tainan 70970, Taiwan

[3] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 833, Taiwan

[4] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Dept Elect Engn, Tainan 701, Taiwan

[5] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Inst Microelect, Tainan 701, Taiwan

来源：

IET OPTOELECTRONICS | 2008年 / 2卷 / 01期

关键词：

D O I：

10.1049/iet-opt:20070007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN-based metal-insulator-semiconductor (MIS) two-dimensional electron gas ultraviolet (UV) photodetectors with sputtered SiO2 insulation and passivation layers were fabricated. With a 5 V applied bias and 35 mW deuterium lamp irradiation, it was found that the photocurrent to dark current contrast ratio was 2.1x10(4) for the MIS photodetector with passivation. It was also found that UV to visible rejection ratio of such MIS photodetector with passivation was more than three orders of magnitude, while the responsivity was 0.144 A/W with a 5 V applied bias and a 350 run, incident light wavelength. Such a result was found to be much larger than those observed from the metal-semiconductor-metal photodetector and the MIS photodetector without passivation.

引用

页码：55 / 57

页数：3

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