Strain-rate dependence of ramp-wave evolution and strength in tantalum

被引:19
|
作者
Lane, J. Matthew D. [1 ]
Foiles, Stephen M. [1 ]
Lim, Hojun [1 ]
Brown, Justin L. [1 ]
机构
[1] Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA
关键词
HALL-PETCH RELATIONSHIP; EMBEDDED-ATOM-METHOD; PLASTIC-DEFORMATION; COMPRESSION; METALS;
D O I
10.1103/PhysRevB.94.064301
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have conducted molecular dynamics (MD) simulations of quasi-isentropic ramp-wave compression to very high pressures over a range of strain rates from 1011 down to 108 1/s. Using scaling methods, we collapse wave profiles from various strain rates to a master profile curve, which shows deviations when material response is strain-rate dependent. Thus, we can show with precision where, and how, strain-rate dependence affects the ramp wave. We find that strain rate affects the stress-strain material response most dramatically at strains below 20%, and that above 30% strain the material response is largely independent of strain rate. We show good overall agreement with experimental stress-strain curves up to approximately 30% strain, above which simulated response is somewhat too stiff. We postulate that this could be due to our interatomic potential or to differences in grain structure and/or size between simulation and experiment. Strength is directly measured from per-atom stress tensor and shows significantly enhanced elastic response at the highest strain rates. This enhanced elastic response is less pronounced at higher pressures and at lower strain rates.
引用
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页数:6
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