GaAs/AlGaAs quantum ring interferometer with a high-density two-dimensional electron gas

被引：4

作者：

Bykov, AA ^{[1
]}

Kvon, ZD ^{[1
]}

Olshanetsky, EB ^{[1
]}

Litvin, LV ^{[1
]}

Pogosov, AG ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

来源：

PHYSICA E | 1998年 / 2卷 / 1-4期

基金：

俄罗斯基础研究基金会;

关键词：

Aharonov-Bohm effect; electron interferometers;

D O I：

10.1016/S1386-9477(98)00107-6

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In the present work the properties of an in-plane gated ring with the effective radius r(eff) = 0.15 mu m fabricated from a high electron density AlGaAs/GaAs heterostructure are investigated. It is shown that notwithstanding a relatively low mobility of the two-dimensional electron gas in the original heterostructure the Aharonov-Bohm oscillations amplitude in this ring at T = 1.6 K for some values of gale voltage could be as high as 15% of the zero magnetic field resistance of the ring. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：519 / 522

页数：4

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