Normally-off polycrystalline C-H diamond MISFETs with MgF2 gate insulator and passivation

被引：13

作者：

He, Qi ^{[1
]}

Zhang, Jinfeng ^{[1
]}

Ren, Zeyang ^{[1
]}

Zhang, Jincheng ^{[1
]}

Su, Kai ^{[1
]}

Lei, Yingyi ^{[1
]}

Lv, Dandan ^{[1
]}

Mi, Tianhe ^{[1
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Peoples R China

来源：

DIAMOND AND RELATED MATERIALS | 2021年 / 119卷

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

Diamond; MgF2; MISFETs; Normally-off; FIELD-EFFECT TRANSISTOR;

D O I：

10.1016/j.diamond.2021.108547

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a normally-off C-H diamond metal-insulator-semiconductor field effect transistor (MISFET) using a 15-nm-thick thermally evaporated MgF2 film as both the gate dielectric and the passivation layer. The normallyoff channel is directly formed based on the Al/MgF2/C-H diamond MIS gate structure. The 4-mu m device delivers a record high transconductance (gm) of 26.2 mS/mm among normally-off C-H diamond FETs, and a threshold voltage of 0.60 V, a maximum mu(eff) of 138.9 cm(2)/V.s, a maximum drain current (I-Dmax) of 49.7 mA/mm and an on-resistance (R-on) of 84.4 Omega.mm at the gate voltage of 5 V. The low Ron and high gm and large I-Dmax arise from the good conductivity at the MgF2/C-H diamond interface, and the normally-off operation could be attributed to the depletion effect of the gate on the channel with its 2DHG conductivity just slightly degraded after MgF2 deposition.

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页数：5

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