Magnetoresistance in epitaxially grown MnAs films on GaAs substrates

被引：3
作者：
Manago, Takashi
Sinsarp, Asawin
Akinaga, Hiro
机构：
[1] Tokyo Univ Sci, Dept Elect & Comp Sci, Yamaguchi 7560884, Japan
[2] Natl Inst Adv Ind Sci & Technol, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058568, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 03期
关键词：
D O I：
10.1063/1.2763984
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Magnetotransport properties of epitaxially grown MnAs((1) over bar 100) films on GaAs(001) substrates were investigated. The thickness of the films was adjusted to 250 nm, which is the characteristic thickness for showing a clear ladder-type magnetic domain structure. The broad magnetoresistance, (MR) behaviors depend on the magnetic field directions, and they follow the magnetization process well. Detailed investigation of MR in low magnetic fields along the magnetic easy axis revealed that the additional MR effect around 0 T depends on the current direction. The MR in low magnetic fields reflects the characteristic domain structures of the MnAs films. (c) 2007 American Institute of Physics.
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页数：5
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