Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy

被引:41
作者
Choi, Byoung Ki [1 ]
Kim, Minu [2 ,3 ]
Jung, Kwang-Hwan [4 ]
Kim, Jwasoon [4 ]
Yu, Kyu-Sang [4 ]
Chang, Young Jun [1 ]
机构
[1] Univ Seoul, Dept Phys, Seoul 02504, South Korea
[2] Inst for Basic Sci Korea, Ctr Correlated Electron Syst, Seoul 08826, South Korea
[3] Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea
[4] Korea Mat & Anal Corp, Daejeon 34028, South Korea
来源
NANOSCALE RESEARCH LETTERS | 2017年 / 12卷
基金
新加坡国家研究基金会;
关键词
MoSe2; Temperature-dependent band gap; Thermal stability; Molecular beam epitaxy; Spectroscopic ellipsometry; Time of flight medium-energy ion-scattering spectroscopy; SINGLE-LAYER; ELECTRONIC-STRUCTURE; TRANSITION; MONOLAYER; FILMS; WSE2; MONO;
D O I
10.1186/s11671-017-2266-7
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report on a temperature-dependent band gap property of epitaxial MoSe2 ultrathin films. We prepare uniform MoSe2 films epitaxially grown on graphenized SiC substrates with controlled thicknesses by molecular beam epitaxy. Spectroscopic ellipsometry measurements upon heating sample in ultra-high vacuum showed temperature-dependent optical spectra between room temperature to 850 degrees C. We observed a gradual energy shift of optical band gap depending on the measurement temperature for different film thicknesses. Fitting with the vibronic model of Huang and Rhys indicates that the constant thermal expansion accounts for the steady decrease of band gap. We also directly probe both optical and stoichiometric changes across the decomposition temperature, which should be useful for developing hightemperature electronic devices and fabrication process with the similar metal chalcogenide films.
引用
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页数:7
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