Efficiency Comparison between SiC- and Si-based Active Neutral-Point Clamped Converters

被引：0

作者：

Nicolas-Apruzzese, J. ^{[1
]}

Maset, E. ^{[2
]}

Busquets-Monge, S. ^{[1
]}

Esteve, V. ^{[2
]}

Bordonau, J. ^{[1
]}

Calle-Prado, A. ^{[1
]}

Jordan, J. ^{[2
]}

机构：

[1] Tech Univ Catalonia UPC, Dept Elect Engn, Barcelona, Spain

[2] Univ Valencia, Dept Elect Engn, E-46100 Burjassot, Valencia, Spain

来源：

2015 IEEE INTERNATIONAL CONFERENCE ON INDUSTRIAL TECHNOLOGY (ICIT) | 2015年

关键词：

SiC technology; SiC MOSFET; wide band gap; active neutral-point clamped; efficiency; multilevel conversion; DC-DC CONVERTERS; POWER DEVICES; ALL-SI; PERFORMANCE; GENERATION;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper presents an efficiency comparison between silicon-carbide technology and silicon technology. In order to achieve this, the efficiency of an active neutral-point clamped converter built up with silicon carbide power-devices is compared with the efficiency of an active neutral-point clamped converter built up with silicon power-devices, under a particular operating mode and a particular selection of devices. Firstly, overall losses of both converters are estimated. Then, experimental tests are carried out to measure their overall losses and efficiency. Finally, experimental results are compared with the estimations to support the analysis. The efficiency of the SiC converter is higher in all the switching-frequency range.

引用

页码：3058 / 3063

页数：6

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