Determination of Thermal Fatigue Delamination of Die Attach Materials for High-Brightness LEDs

被引:9
|
作者
Zhang, Guangchen [1 ]
Feng, Shiwei [1 ]
Zhu, Hui [1 ]
Liu, Jing [1 ]
Li, Jingwan [1 ]
Guo, Chunsheng [1 ]
机构
[1] Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
关键词
Light-emitting diodes (LEDs); thermal interface material; structure function;
D O I
10.1109/LPT.2011.2179925
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The thermal fatigue delamination interface of die attach materials in high-brightness light-emitting diodes (HB LEDs) is determined using a noninvasive approach. Failure analysis of HB LEDs containing Au80Sn20 eutectic alloy and silver paste as die attach materials is performed by monitoring the changes in the partial thermal resistances in differential structure function curves of the HB LEDs through power cycling experiments. The results suggest that delamination of the Au80Sn20 eutectic and silver paste materials occurs at the chip-to-die attach interface and die attach-to-heat sink interface, respectively, which is consistent with cross-sectional scanning electron microscope analysis.
引用
收藏
页码:398 / 400
页数:3
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