Electric-field control of magnetic domain-wall velocity in ultrathin cobalt with perpendicular magnetization

被引：145

作者：

Chiba, D. ^{[1
,2
]}

Kawaguchi, M. ^{[1
]}

Fukami, S. ^{[3
,4
]}

Ishiwata, N. ^{[3
]}

Shimamura, K. ^{[1
]}

Kobayashi, K. ^{[1
]}

Ono, T. ^{[1
]}

机构：

[1] Kyoto Univ, Inst Chem Res, Uji, Kyoto 6110011, Japan

[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3220012, Japan

[3] NEC Corp Ltd, Tsukuba, Ibaraki 3058501, Japan

[4] Tohoku Univ, Ctr Spintron Integrated Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

NATURE COMMUNICATIONS | 2012年 / 3卷

关键词：

FERROMAGNETIC SEMICONDUCTOR; MOTION; PROPAGATION; UNIVERSALITY; MANIPULATION; ANISOTROPY; DYNAMICS;

D O I：

10.1038/ncomms1888

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Controlling the displacement of a magnetic domain wall is potentially useful for information processing in magnetic non-volatile memories and logic devices. A magnetic domain wall can be moved by applying an external magnetic field and/or electric current, and its velocity depends on their magnitudes. Here we show that the applying an electric field can change the velocity of a magnetic domain wall significantly. A field-effect device, consisting of a top-gate electrode, a dielectric insulator layer, and a wire-shaped ferromagnetic Co/Pt thin layer with perpendicular anisotropy, was used to observe it in a finite magnetic field. We found that the application of the electric fields in the range of +/- 2-3 MV cm(-1) can change the magnetic domain wall velocity in its creep regime (10(6)-10(3) m s(-1)) by more than an order of magnitude. This significant change is due to electrical modulation of the energy barrier for the magnetic domain wall motion.

引用

页数：7

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