Ka-band multistage MMIC low-noise amplifier using source inductors with different values for each stage

被引：14

作者：

Uchida, H ^{[1
]}

Takatsu, S

Nakahara, K

Katoh, T

Itoh, Y

Imai, R

Yamamoto, M

Kadowaki, N

机构：

[1] Mitsubishi Elect Corp, Informat Tehcnol R&D Ctr, Kanagawa 2478501, Japan

[2] Space Commun Div, Commun Res Lab, Koganei, Tokyo 1848795, Japan

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1999年 / 9卷 / 02期

关键词：

D O I：

10.1109/75.755050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A K alpha-band three-stage monolithic microwave integrated circuit (MMIC) low-noise amplifier using source inductors with different values for each stage has been developed for use in active phased-array receiver modules, The three-stage MMIC low-noise amplifier with 0.15 x 120 mu m(2) AlGaAs/InGaAs pHEMT's has achieved a noise figure of 1.6 dB, a gain of 22.8 dB, an input return loss of 29 dB, and an output return loss of 24 dB at 28 GHz by optimizing the values of source inductors for each stage. The minimum noise figure was 1.3 dB at 30 GHz.

引用

页码：71 / 72

页数：2

共 5 条

[1]

ENGBERG J, 1974, P 4 EUR MICR C, P385

[2]

FUJIMOTO S, 1997 IEEE MTT S, P17

[3] W-BAND MONOLITHIC LOW-NOISE AMPLIFIERS FOR ADVANCED MICROWAVE SCANNING RADIOMETER [J].

ITOH, Y ;

NAKAHARA, K ;

SAKURA, T ;

YOSHIDA, N ;

KATOH, T ;

TAKAGI, T ;

ITO, Y .

IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1995, 5 (02) :59-61

[4] A V-BAND, HIGH-GAIN, LOW-NOISE, MONOLITHIC PHEMT AMPLIFIER MOUNTED ON A SMALL HERMETICALLY SEALED METAL PACKAGE [J].

ITOH, Y ;

HORIIE, Y ;

NAKAHARA, K ;

YOSHIDA, N ;

KATOH, T ;

TAKAGI, T .

IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1995, 5 (02) :48-49

[5] MODELING OF NOISE PARAMETERS OF MESFET AND MODFET AND THEIR FREQUENCY AND TEMPERATURE-DEPENDENCE [J].

POSPIESZALSKI, MW .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1989, 37 (09) :1340-1350

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