Comparative Chemico-Physical Analyses of Strain-Free GaAs/Al0.3Ga0.7As Quantum Dots Grown by Droplet Epitaxy

被引：6
|
作者：
Yeo, Inah [1 ]
Kim, Doukyun [1 ]
Lee, Kyu-Tae [2 ]
Kim, Jong Su [3 ]
Song, Jin Dong [4 ]
Park, Chul-Hong [1 ]
Han, Il Ki [2 ]
机构：
[1] Pusan Natl Univ, Dielect & Adv Matter Phys Res Ctr, Busan 46241, South Korea
[2] Korea Inst Sci & Technol, Nanophoton Res Ctr, Seoul 02792, South Korea
[3] Yeungnam Univ, Dept Phys, Gyeonsan 38541, South Korea
[4] Korea Inst Sci & Technol, Postsilicon Semicond Inst, Seoul 02792, South Korea
来源：
NANOMATERIALS | 2020年 / 10卷 / 07期
基金：
新加坡国家研究基金会;
关键词：
droplet epitaxy; strain-free quantum dot; TEM-EDS;
D O I：
10.3390/nano10071301
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We investigate the quantum confinement effects on excitons in several types of strain-free GaAs/Al0.3Ga0.7As droplet epitaxy (DE) quantum dots (QDs). By performing comparative analyses of energy-dispersive X-ray spectroscopy with the aid of a three-dimensional (3D) envelope-function model, we elucidate the individual quantum confinement characteristics of the QD band structures with respect to their composition profiles and the asymmetries of their geometrical shapes. By precisely controlling the exciton oscillator strength in strain-free QDs, we envisage the possibility of tailoring light-matter interactions to implement fully integrated quantum photonics based on QD single-photon sources (SPSs).
引用
收藏
页码：1 / 8
页数：8
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