Performance of very low dark current SWIR PIN arrays

被引：10

作者：

Boisvert, Joseph ^{[1
]}

Isshiki, Takahiro ^{[1
]}

Sudharsanan, Rengarajan ^{[1
]}

Yuan, Ping ^{[1
]}

McDonald, Paul ^{[1
]}

机构：

[1] Boeing Co, Spectrolab Inc, Sylmar, CA 91342 USA

来源：

INFRARED TECHNOLOGY AND APPLICATIONS XXXIV, PTS 1 AND 2 | 2008年 / 6940卷

关键词：

D O I：

10.1117/12.781432

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Boeing Spectrolab has grown, fabricated and tested InGaAs PIN arrays with less than 1 nA/cm(2) dark current density at 280 degrees K. The PIN diodes display greater than 1 A/W responsivity at -100 mV reverse bias with about 50 fF of diode capacitance.

引用

页数：8

共 4 条

[1]

BOISVERT J, 2006, 2006 17 19 JUL LEOS, V54

[2] Transmission electron microscopy study of the InP/InGaAs and InGaAs/InP heterointerfaces grown by metalorganic vapor-phase epitaxy [J].