Cryogenic ultra-low-noise SiGe transistor amplifier

被引：17
作者：
Ivanov, B. I. [1 ,2 ]
Trgala, M. [3 ]
Grajcar, M. [3 ]
Il'ichev, E. [1 ]
Meyer, H. -G. [1 ]
机构：
[1] Inst Photon Technol, D-07702 Jena, Germany
[2] Novosibirsk State Tech Univ, Novosibirsk 630092, Russia
[3] Comenius Univ, Dept Expt Phys, SK-84248 Bratislava, Slovakia
来源：
REVIEW OF SCIENTIFIC INSTRUMENTS | 2011年 / 82卷 / 10期
关键词：
D O I：
10.1063/1.3655448
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
An ultra-low-noise one-stage SiGe heterojunction bipolar transistor amplifier was designed for cryogenic temperatures and a frequency range of 10 kHz-100 MHz. A noise temperature T(N) approximate to 1.4 K was measured at an ambient temperature of 4.2 K at frequencies between 100 kHz and 100 MHz for a source resistance of similar to 50 Omega. The voltage gain of the amplifier was 25 dB at a power consumption of 720 mu W. The input voltage noise spectral density of the amplifier is about 35 pV/root Hz. The low noise resistance and power consumption makes the amplifier suitable for readout of resistively shunted DC SQUID magnetometers and amplifiers. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3655448]
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页数：3
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