Development of n-on-p silicon sensors for very high radiation environments

被引：75

作者：

Unno, Y. ^{[1
]}

Affolder, A. A. ^{[8
]}

Allport, P. P. ^{[8
]}

Bates, R. ^{[6
]}

Betancourt, C. ^{[13
]}

Bohm, J. ^{[12
]}

Brown, H. ^{[8
]}

Buttar, C. ^{[6
]}

Carter, J. R. ^{[3
]}

Casse, G. ^{[8
]}

Chen, H. ^{[2
]}

Chilingarov, A. ^{[7
]}

Cindro, V. ^{[9
]}

Clark, A. ^{[5
]}

Dawson, N. ^{[13
]}

DeWilde, B. ^{[15
]}

Dolezal, Z. ^{[11
]}

Eklund, L. ^{[6
]}

Fadeyev, V. ^{[13
]}

Ferrere, D. ^{[5
]}

Fox, H. ^{[7
]}

French, R. ^{[14
]}

Garcia, C. ^{[17
]}

Gerling, M. ^{[13
]}

Sevilla, S. Gonzalez ^{[5
]}

Gorelov, I. ^{[10
]}

Greenall, A. ^{[8
]}

Grillo, A. A. ^{[13
]}

Hamasaki, N. ^{[16
]}

Hara, K. ^{[16
]}

Hatano, H. ^{[16
]}

Hoeferkamp, M. ^{[10
]}

Hommels, L. B. A. ^{[3
]}

Ikegami, Y. ^{[1
]}

Jakobs, K. ^{[4
]}

Kamada, S. ^{[18
]}

Kierstead, J. ^{[2
]}

Kodys, P. ^{[11
]}

Kohler, M. ^{[4
]}

Kohriki, T. ^{[1
]}

Kramberger, G. ^{[9
]}

Lacasta, C. ^{[17
]}

Li, Z. ^{[2
]}

Lindgren, S. ^{[13
]}

Lynn, D. ^{[2
]}

Mikestikova, M. ^{[12
]}

Maddock, P. ^{[13
]}

Mandic, I. ^{[9
]}

Marti i Garcia, S. ^{[17
]}

martinez-McKinney, F. ^{[13
]}

机构：

[1] High Energy Accelerator Org KEK, Inst Particle & Nucl Study, Tsukuba, Ibaraki 3050801, Japan

[2] Brookhaven Natl Lab, Dept Phys, Upton, NY 11973 USA

[3] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[4] Univ Freiburg, Inst Phys, D-79104 Freiburg, Germany

[5] Univ Geneva, Sect Phys, CH-1211 Geneva 4, Switzerland

[6] Univ Glasgow, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland

[7] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[8] Univ Liverpool, Oliver Lodge Lab, Liverpool L69 3BX, Merseyside, England

[9] Jozef Stefan Inst, Expt Particle Phys Dept, SI-1001 Ljubljana, Slovenia

[10] Univ New Mexico, Dept Phys & Astron, Albuquerque, NM 87131 USA

[11] Charles Univ Prague, Inst Particle & Nucl Phys, CZ-18000 Prague 8, Czech Republic

[12] Acad Sci Czech Republic, Inst Phys, CZ-18221 Prague 8, Czech Republic

[13] Univ Calif Santa Cruz, Santa Cruz Inst Particle Phys SCIPP, Santa Cruz, CA 95064 USA

[14] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[15] SUNY Stony Brook, Dept Phys & Astron, Stony Brook, NY 11794 USA

[16] Univ Tsukuba, Inst Pure & Appl Sci, Tsukuba, Ibaraki 3058571, Japan

[17] Ctr Mixt Univ Valencia CSIC, Inst Fis Corpuscular IFIC, ES-46071 Valencia, Spain

[18] Hamamatsu Photon KK, Div Solid State, Higashi Ku, Hamamatsu, Shizuoka 4358558, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2011年 / 636卷

关键词：

Silicon; Sensor; Microstrip; p-type; n-in-p; ATLAS; SLHC; Radiation damage; MICROSTRIP SENSORS;

D O I：

10.1016/j.nima.2010.04.080

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have developed a novel and highly radiation-tolerant n-in-p silicon microstrip sensor for very high radiation environments such as in the Super Large Hadron Collider. The sensors are designed for a fluence of 1 x 10(15) neq/cm(2) and are fabricated from p-type, FZ, 6 in. (150 mm) wafers onto which we lay out a single 9.75 cm x 9.75 cm large-area sensor and several 1 cm x 1 cm miniature sensors with various n-strip isolation structures. By evaluating the sensors both pre- and post-irradiation by protons and neutrons, we find that the full depletion voltage evolves to approximately 800 V and that the n-strip isolation depends on the p(+) concentration. In addition, we characterize the interstrip resistance, interstrip capacitance and the punch-through-protection (PTP) voltage. The first fabrication batch allowed us to identify the weak spots in the PTP and the stereo strip layouts. By understanding the source of the weakness, the mask was modified accordingly. After modification, the follow-up fabrication batches and the latest fabrication of about 30 main sensors and associated miniature sensors have shown good performance, with no sign of microdischarge up to 1000 V. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：S24 / S30

页数：7

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