Impact of Mixture Gas Plasma of N2 and O2 as the N Source on ZnO-Based Ultraviolet Light-Emitting Diodes Fabricated by Molecular Beam Epitaxy

被引：35

作者：

Kato, Hiroyuki ^{[1
]}

Yamamuro, Tomofumi ^{[1
]}

Ogawa, Akio ^{[1
]}

Kyotani, Chizu ^{[1
]}

Sano, Michihiro ^{[1
]}

机构：

[1] Stanley Elect Co Ltd, Ctr Res & Dev, Yokohama, Kanagawa 2250014, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 09期

关键词：

EMISSION; QUALITY;

D O I：

10.1143/APEX.4.091105

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO-based double-heterostructure ultraviolet light-emitting diodes (LEDs) were fabricated on n-type Zn-polar ZnO substrates by plasma-assisted molecular beam epitaxy employing mixture gas plasma of N-2 and O-2 as the N source. By using mixture gas plasma of N-2 with a little added O-2, the number of N atoms increased and N-2 molecules decreased, as confirmed by optical emission spectrometry. The fabricated LEDs had an ultraviolet near-band-emission of around 380 nm. The integrated electroluminescence intensity of the LED fabricated using N-2 and O-2 plasma was more than 10 times higher than that of an LED fabricated using N-2 plasma. (C) 2011 The Japan Society of Applied Physics

引用

页数：3