Growth of device-quality GaAs layer directly on (001) Ge substrates by both solid-source and gas-source MBE

被引：24

作者：

Li, W ^{[1
]}

Laaksonen, S ^{[1
]}

Haapamaa, J ^{[1
]}

Pessa, M ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, Tampere 33101, Finland

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

defects; molecular beam epitaxy; semiconducting materials;

D O I：

10.1016/S0022-0248(01)00641-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A detailed study of GaAs frown directly on offcut (0 0 1) Ge substrates by both solid-source and gas-source molecular beam epitaxy (MBE) has been conducted. It was found that control of As-2 initial exposure and a clean Ge surface were crucial to achieve anti-phase domain-free growth of GaAs on Ge. Under optimized growth conditions device-quality GaAs film was obtained, in which significantly reduced interdiffusion across the GaAs/Ge interface was achieved. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：104 / 107

页数：4

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