Preparation and characteristic of p-type ZnO films by Al-N codoping technique

被引：10
|
作者：
Zhang, ZH [1 ]
Ye, ZZ [1 ]
Ma, DW [1 ]
Zhu, LP [1 ]
Zhou, T [1 ]
Zhao, BH [1 ]
Zhu-Ge, F [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
MATERIALS LETTERS | 2005年 / 59卷 / 22期
基金：
中国国家自然科学基金;
关键词：
ZnO; Al-N codoping; p-type conduction; DC reactive magnetron sputtering;
D O I：
10.1016/j.matlet.2005.04.008
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
p-Type conduction in ZnO thin films have been realized by the Al-N codoping method. The codoped films with c-axis orientations were prepared at various substrate temperatures in the range of 300-600 degrees C in pure N2O ambient The codoped film prepared at 500 degrees C shows the lowest resistivity of 54.8 Omega cm and highest carrier concentration of 1.32 x 10(18) cm(-3), which is about 10(4) times higher than that of N doped ZnO, and the film shows the best crystal quality. (C) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：2732 / 2734
页数：3
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