Normally-off AlGaN/GaN power tunnel-junction FETs

被引：5

作者：

Chen, Hongwei ^{[1
]}

Yuan, Li ^{[1
]}

Zhou, Qi ^{[1
]}

Zhou, Chunhua ^{[1
]}

Chen, Kevin J. ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 | 2012年 / 9卷 / 3-4期

关键词：

normally-off; AlGaN/GaN heterostructure; tunnel-junction; Schottky source; MOSFET; GATE; DRAIN; HEMT;

D O I：

10.1002/pssc.201100338

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present normally-off AlGaN/Gan power tunnel-junction FETs (TJ-FETs) with high breakdown voltage, low off-state leakage current and low specific onresistance. The TJ-FETs exhibit normally-off operation in an otherwise normally-on as-grown sample owing to a current controlling scheme different from the conventional FETs. The high 2DEG density in AlGaN/GaN heterostructure results in a thin tunnel barrier whose effective thickness is controlled by an overlaying gate electrode. This tunnel junction is controlled by an overlapping gate and deliver highly efficient quantum tunnelling, enabling normally-off operation. A positive gate bias results in a nanometer-thick barrier with high tunnelling current, while a zero gate bias leads to a thicker barrier that effectively blocks the current flow. High tunnel current (326 mA/mm), low off-state leakage (10(-8) mA/mm) and high off-state breakdown voltage (557 V) are obtained on a standard GaN-on-Si platform featuring a 1.8 mu m buffer. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：871 / 874

页数：4

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