Nitrogen incorporation in amorphous SiCN layers prepared from electron cyclotron resonance plasmas

被引：12

作者：

Barbadillo, L ^{[1
]}

Gómez, FJ ^{[1
]}

Hernández, MJ ^{[1
]}

Piqueras, J ^{[1
]}

机构：

[1] Univ Autonoma Madrid, Fac Ciencias, Lab Microelect, E-28049 Madrid, Spain

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 68卷 / 05期

关键词：

D O I：

10.1007/s003390050948

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electron cyclotron resonance plasma chemical vapor deposition with nitrogen, methane, and argon-diluted silane as precursors has been used to prepare SiCN thin films. Optical emission from CN species in the plasma has been observed. Infrared measurements show that most of the nitrogen is incorporated to the thin solid films in the form of Si-N, C=N and C=N bonds suggesting a basic structure of incomplete SiN tetrahedra with C=N and C=N bridging bonds. The deposited films are nearly transparent in the visible range with a weak absorption threshold between 2.2 and 3.5 eV.

引用

页码：603 / 607

页数：5

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