Edge states in graphene quantum Hall system with bond vs potential disorder

被引：1

作者：

Arikawa, Mitsuhiro ^{[1
,2
]}

Aoki, Hideo ^{[3
]}

Hatsugai, Yasuhiro ^{[4
]}

机构：

[1] Univ Tsukuba, Ctr Computat Sci, Tsukuba, Ibaraki 3058571, Japan

[2] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1020075, Japan

[3] Univ Tokyo, Dept Phys, Tokyo 1130033, Japan

[4] Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 3058571, Japan

来源：

HORIBA INTERNATIONAL CONFERENCE: THE 19TH INTERNATIONAL CONFERENCE ON THE APPLICATION OF HIGH MAGNETIC FIELDS IN SEMICONDUCTOR PHYSICS AND NANOTECHNOLOGY | 2011年 / 334卷

关键词：

DIRAC FERMIONS; PHASE;

D O I：

10.1088/1742-6596/334/1/012043

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

While usual edge states in the quantum Hall effect (QHE) reside between adjacent Landau levels, QHE in graphene has a peculiar edge mode at E = 0 that resides right within the n = 0 Landau level as protected by the chiral symmetry. In real graphene, disorder always exists, and here we study how the edge states appear in disordered graphene QHE. We have to discriminate bond disorder and potential disorder, since the former respects the chiral symmetry in the bipartite lattice while the latter does not. We have found that, for a bond disorder, the charge accumulation along zigzag edges persists to occur, while a potential disorder destroys them. The charge accumulation along zigzag edges should be measured with an STM imaging in magnetic fields.

引用

页数：4

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