Pressureless joining of silicon carbide using Ti3SiC2 MAX phase at 1500°C

被引：21
|
作者：
Ma, Hai-Bin [1 ]
Xue, Jia-Xiang [1 ]
Zhai, Jian-Han [1 ]
Liu, Tong [1 ]
Ren, Qi-Sen [1 ]
Liao, Ye-Hong [1 ]
Wu, Li-Xiang [2 ]
Guo, Wei-Ming [2 ]
Sun, Shi-Kuan [2 ]
Lin, Hua-Tay [2 ]
机构：
[1] China Nucl Power Technol Res Inst, ATF Res & Dev Ctr, Shenzhen 518026, Peoples R China
[2] Guangdong Univ Technol, Sch Electromech Engn, Guangzhou 510090, Guangdong, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2020年 / 46卷 / 09期
基金：
国家重点研发计划;
关键词：
Silicon carbide; Pressureless joining; Microstructure; Shear strength; C/SIC COMPOSITE JOINTS; SHEAR-STRENGTH; CERAMICS; TI; MICROSTRUCTURE; INTERLAYER; IRRADIATION; COMPONENTS; TI3ALC2; METAL;
D O I：
10.1016/j.ceramint.2020.02.155
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Silicon carbide ceramics were pressureless joined by using Ti foil and Si powder, which generated Ti3SiC2 phase as the interlayer. The phase composition, microstructure and the shear strength were investigated. It was revealed that the SiC assembly after joining at 1500 degrees C showed the high shear strength of 76.2 +/- 19.5 MPa. The secondary phase of TiC within the interlayer was expected to contribute to densification improvement of Ti3SiC2 phase and thermal stress reduction.
引用
收藏
页码：14269 / 14272
页数：4
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