Effect of growth interruption on the optical properties of InAs/GaAs quantum dots

被引：17
作者：
Lu, ZD
Xu, JZ
Zheng, BZ
Xu, ZY [1 ]
Ge, WK
机构：
[1] Chinese Acad Sci, Inst Semicond, NLSM, Beijing 100083, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 1999年 / 109卷 / 10期
基金：
中国国家自然科学基金;
关键词：
semiconductors; optical properties; luminescence;
D O I：
10.1016/S0038-1098(99)00011-3
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effect of growth interruption (GI) on the optical properties of InAs/GaAs quantum dots was investigated by cw and time-resolved photoluminescence (PL). It is found that this effect depends very much on the growth conditions, in particular, the growth rate. In the case of low growth rate, we have found that the GI may introduce either red-shift or blue-shift in PL with increase of the interruption lime, depending on the InAs thickness. The observed red shift in our 1.7 monolayer (ML) sample is attributed to the evolution of the InAs islands during the growth interruption. While the blue-shift in the 3 ML sample is suggested to be mainly caused by the strain effect. In addition, nearly zero shift was observed for the sample with thickness around 2.5 ML, (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：649 / 653
页数：5
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