LiF/Al2O3 as Dielectrics for MOSFET on Single Crystal Hydrogen-Terminated Diamond

被引：24
|
作者：
Wang, Yan-Feng [1 ,2 ]
Wang, Wei [1 ,2 ]
Abbasi, Haris Naeem [1 ,2 ]
Chang, Xiaohui [1 ,2 ]
Zhang, Xiaofan [1 ,2 ]
Zhu, Tianfei [1 ,2 ]
Liu, Zhangcheng [1 ,2 ]
Song, Wangzhen [1 ,2 ]
Chen, Genqiang [1 ,2 ]
Wang, Hong-Xing [1 ,2 ]
机构：
[1] Xi An Jiao Tong Univ, Minist Educ, Key Lab Phys Elect & Devices, Xian 710049, Peoples R China
[2] Xi An Jiao Tong Univ, Inst Wide Band Gap Semicond, Sch Elect & Informat Engn, Xian 710049, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 06期
基金：
中国国家自然科学基金; 中国博士后科学基金;
关键词：
Diamond; MOSFET; LiF/Al2O3; supercapacitor; FIELD-EFFECT TRANSISTORS; OPERATION; NITROGEN;
D O I：
10.1109/LED.2020.2990118
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Fabrication of single crystal hydrogenterminated diamond MOSFET with dielectrics of LiF/Al2O3 has been successfully carried out. After patterning source and drain electrodes, 60nm LiF/20nm Al2O3 were deposited as dielectrics. The output and transfer characteristics were investigated, indicating the typical p-type channel MOSFET. The on/off ratio was similar to 10(9), which was high enough for practical applications. The fixed and trapped charge in LiF/Al2O3 were also examined. Based on the capacitance-voltage curves, the dielectric constant of LiF/Al2O3 was calculated to be 36.1, which was ascribed to the LiF supercapacitor structure. To the best of our knowledge, this LiF supercapacitor structure was first used in hydrogen-terminated diamond MOSFET to improve the dielectric constant.
引用
收藏
页码：808 / 811
页数：4
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