What determines the interfacial configuration of Nb/Al2O3 and Nb/MgO interface

被引:31
作者
Du, J. L. [1 ]
Fang, Y. [2 ]
Fu, E. G. [1 ]
Ding, X. [2 ]
Yu, K. Y. [3 ]
Wang, Y. G. [1 ]
Wang, Y. Q. [4 ]
Baldwin, J. K. [4 ]
Wang, P. P. [1 ]
Bai, Q. [1 ]
机构
[1] Peking Univ, Sch Phys, State Key Lab Nucl Phys & Technol, Beijing 100871, Peoples R China
[2] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
[3] China Univ Petr, Dept Mat Sci & Engn, Beijing 102249, Peoples R China
[4] Los Alamos Natl Lab, Expt Phys Sci Directorate, Los Alamos, NM 87544 USA
关键词
TRANSMISSION ELECTRON-MICROSCOPY; EPITAXIAL NB-AL2O3 INTERFACES; HETEROPHASE INTERFACE; MECHANICAL-PROPERTIES; ATOMIC-STRUCTURE; SPUTTERED CU/V; NB FILMS; MISFIT; SAPPHIRE; MGO;
D O I
10.1038/srep33931
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Nb films are deposited on single crystal Al2O3 (11 (2) over bar0) and MgO(111) substrates by e-beam evaporation technique. Structure of Nb films and orientation relationships (ORs) of Nb/Al2O3 and Nb/MgO interface are studied and compared by the combination of experiments and simulations. The experiments show that the Nb films obtain strong (110) texture, and the Nb film on Al2O3(11 (2) over bar0) substrate shows a higher crystalline quality than that on MgO(111) substrate. First principle calculations show that both the lattice mismatch and the strength of interface bonding play major roles in determining the crystalline perfection of Nb films and ORs between Nb films and single crystal ceramic substrates. The fundamental mechanisms for forming the interfacial configuration in terms of the lattice mismatch and the strength of interface bonding are discussed.
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页数:10
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