Emission of terahertz radiation from an interdigitated grating gates high electron-mobility transistors

被引：0

作者：

Meziani, Y. M. ^{[1
]}

Otsuji, T. ^{[1
]}

Sano, E. ^{[2
]}

机构：

[1] Tohoku Univ, Res Inst Elect Commun, Sendai, Miyagi 9808577, Japan

[2] Hokkaido Univ, Res Ctr Integrated Quamtum Elect, Sapporo, Hokkaido 0608628, Japan

来源：

2007 JOINT 32ND INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 15TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, VOLS 1 AND 2 | 2007年

关键词：

emission of terahertz radiations; HEMT; grating gates device; plasma waves;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

New doubly interdigitated grating gate high-electron mobility transistor (HEMT) was illuminated at room temperature by a 1.5-mu m CW laser. A clear emission of the terahertz radiation has been detected using a Silicon bolometer cooled down to 4.2 K and placed in the front of the sample. The observed signal was related to the self oscillation of the plasma waves in our new HEMT device.

引用

页码：459 / +

页数：2

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