Fourier transform infrared spectroscopy investigation of chemical bonding in low-k a-SiC:H thin films

Fourier Transform Infrared (FTIR) Spectroscopy has long been utilized as an analytical technique for qualitatively determining the presence of various different chemical bonds in gasses, liquids, solids, and on surfaces. Most recently, FTIR has been proven to be extremely useful for understanding the different types of bonding present in low dielectric constant "low-k" organosilicate materials. These low-k materials are predominantly utilized in the nanoelectronics industry as the interlayer dielectric material in advanced Cu interconnect structures. In this article, we utilize FTIR to perform a detailed analysis of the changes in chemical bonding that occur in Plasma Enhanced Chemically Vapor Deposited (PECVD) low-k a-SiC:H thin films. PECVD low-k a-SiC:H materials are equally important in advanced Cu interconnects and are utilized as both etch stop and Cu diffusion barrier layers. We specifically investigate the changes that occur in low-k a-SiC:H films as the dielectric constant and mass density of these films are decreased from >7 to <3 and from 2.5 to 1 g/cm(3) respectively. We show that decreases in mass density and dielectric constant are accompanied by both an increase in terminal SiHx and CHx bonding and a decrease in Si-C network bonding. At densities of 1.85 g/cm(3), the concentration of terminal SiHx bonding peaks and subsequent hydrogen incorporation are achieved predominantly via terminal CH3 groups. Low-k a-SiC:H films with k <3.5 and density <1.3 g/cm(3) can be achieved via incorporating larger organic phenyl groups but result in non-stoichiometric carbon rich films. Electron beam curing of these lower density a-SiC:H films results in volatilization of the phenyl groups leaving behind nanoporous regions and production of some C-C-C chain linkages in the network. (C) 2011 Elsevier B.V. All rights reserved.