A surface-potential-based non-charge-sheet core model for fully depleted SOI MOSFET

被引：0

作者：

Zhang, Jian ^{[1
]}

He, Jin ^{[1
]}

Zhang, Lining ^{[1
]}

Zheng, Rui ^{[1
]}

Feng, He ^{[1
]}

Fu, Yue ^{[1
]}

Zhang, Xing ^{[1
]}

机构：

[1] Peking Univ, Sch Elect Engn & Compute Sci, Inst Microelect, Beijing 100871, Peoples R China

来源：

EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS | 2007年

关键词：

device physics; SOI MOSFET; surface potential; non-charge-sheet model;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a surface-potential-based non-charge-sheet core model for long-channel fully depleted SOI MOSFET. The formulation starts from a physics-based solution of the surface potential and an analytical non-charge-sheet drain current is provided to describe the fully-depleted SOI MOSFET behavior with the coupling between the front and back interfaces. The model calculation is compared with the numerical simulations, and exact agreement between them is observed for different geometry structures.

引用

页码：569 / 572

页数：4

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