Influence of carrier concentration on properties of InAs waveguide layers in interband cascade laser structures

被引：2
作者：
Dyksik, M. [1 ]
Motyka, M. [1 ]
Sek, G. [1 ]
Misiewicz, J. [1 ]
Dallner, M. [2 ]
Hoefling, S. [2 ,3 ]
Kamp, M. [2 ]
机构：
[1] Wroclaw Univ Sci & Technol, Fac Fundamental Problems Technol, Div Expt Phys, Lab Opt Spect Nanostruct, Wybrzeze Wyspianskiego 27, PL-50370 Wroclaw, Poland
[2] Univ Wurzburg, Tech Phys, Wilhelm Conrad Rontgen Res Ctr Complex Mat Syst, D-97074 Wurzburg, Germany
[3] Univ St Andrews, Sch Phys & Astron, St Andrews KY16 9SS, Fife, Scotland
来源：
JOURNAL OF APPLIED PHYSICS | 2016年 / 120卷 / 04期
关键词：
D O I：
10.1063/1.4958904
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present a characterization of doped InAs layers in interband cascade lasers exploiting the plasmon-enhanced waveguiding. Fast differential reflectance was employed in order to identify the plasma-edge frequency via the Berreman effect and shown as an advantageous method when compared to other types of measurements. The carrier concentration was then derived and compared with the nominal doping densities. The emission properties of the investigated structures were studied by means of photoluminescence (PL). Its full-width at half-maximum and integrated intensity were extracted from PL spectra and analyzed in the function of the doping density (carrier concentration). The PL linewidth was found to be independent of the carrier concentration indicating an insignificant contribution of doping to the structural properties deterioration. The PL intensity decay with the carrier concentration suggests being dominated by Auger recombination losses. Published by AIP Publishing.
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页数：6
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