SWIR InGaAs/GaAsSb type-II quantum well photodetectors and spectrometers integrated on SOI

被引：0

作者：

Wang, Ruijun ^{[1
,2
]}

Muneeb, Muhammad ^{[1
,2
]}

Sprengel, Stephan ^{[3
]}

Boehm, Gerhard ^{[3
]}

Baets, Roel ^{[1
,2
]}

Amann, Markus-Christian ^{[3
]}

Roelkens, Gunther ^{[1
,2
]}

机构：

[1] Ghent Univ Imec, Photon Res Grp, Sint Pietersnieuwstr 41, B-9000 Ghent, Belgium

[2] Univ Ghent, Ctr Nano & Biophoton NB Photon, Ghent, Belgium

[3] Tech Univ Munich, Walter Schottky Inst, Coulombwall 4, D-85748 Garching, Germany

来源：

SILICON PHOTONICS XI | 2016年 / 9752卷

关键词：

silicon photonics; short-wave infrared; photodetectors; arrayed waveguide gratings; heterogeneous integration; 2; MU-M; SILICON; PHOTODIODES;

D O I：

10.1117/12.2211802

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The short- wave infrared wavelength range (2-3 mu m) is attractive for applications in gas sensing and next-generation communication systems. Photodetectors and wavelength (de) multiplexers are key components that have to be developed for these systems. In this contribution, we report the integration of InGaAs/GaAsSb type-II quantum well photodetectors and spectrometers on the silicon photonics platform. In this photodetector epitaxial layer stack, the absorbing active region consists of 6 periods of W-shaped quantum wells, which can also be used to realize lasers. The efficient coupling between silicon waveguides and quantum well photodetectors is realized by tapered III-V waveguides. The photodetectors have a very low dark current of 12 nA at -0.5 V bias at room temperature. The devices show a responsivity of 1.2 A/W at 2.32 mu m wavelength, and higher than 0.5A/W over the 2.2-2.4 mu m wavelength range. On the silicon-on-insulator platform we also demonstrate high performance short- wave infrared spectrometers. 8-channel spectrometers in the 2.3-2.4 mu m range with a resolution of 5nm and 1.4nm are demonstrated, showing a cross-talk below -25 dB and an insertion loss lower than 3 dB.

引用

页数：8

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