Analysis of quasi double gate method for performance prediction of deep submicron double gate SOI MOSFETs

In this paper, we analyse for the first time the effectiveness of the quasi-double gate (QDG) method for performance prediction of short channel double gate (DG) silicon-on-insulator metal-oxide-semiconductor field-effect transistors (MOSFETs) over the entire operating region. An analytical model has been developed to explain the abnormally low values (<< 60 mV/decade) of subthreshold slope that are obtained in QDG devices. We extract the low field mobility (mu(o)), subthreshold slope (S), threshold voltage (V-th), transconductance-to-drain current ratio (g(m)/I-ds) and peak transconductance (g(m))(max) in linear and saturation regions for deep. submicron QDG devices. We demonstrate that the QDG method can accurately predict g(m)/I-ds, (gm)max and mu(o) values for a deep submicron real DG device in the linear and strong inversion regions.