Hexamethylenetetramine-mediated growth of grain-boundary-passivation CH3NH3PbI3 for highly reproducible and stable perovskite solar cells

被引：30

作者：

Zheng, Yan-Zhen ^{[1
,2
]}

Li, Xi-Tao ^{[1
]}

Zhao, Er-Fei ^{[1
]}

Lv, Xin-Ding ^{[1
]}

Meng, Fan-Li ^{[1
]}

Peng, Chao ^{[3
]}

Lai, Xue-Sen ^{[1
]}

Huang, Meilan ^{[3
]}

Cao, Guozhong ^{[4
]}

Tao, Xia ^{[1
]}

Chen, Jian-Feng ^{[2
]}

机构：

[1] Beijing Univ Chem Technol, State Key Lab Organ Inorgan Composites, 15 Beisanhuan East Rd, Beijing 100029, Peoples R China

[2] Beijing Univ Chem Technol, Minist Educ High Grav Engn & Technol, Res Ctr, 15 Beisanhuan East Rd, Beijing 100029, Peoples R China

[3] Queens Univ Belfast, Sch Chem & Chem Engn, Belfast, Antrim, North Ireland

[4] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA

来源：

JOURNAL OF POWER SOURCES | 2018年 / 377卷

基金：

中国国家自然科学基金;

关键词：

Perovskite solar cell; Hexamethylenetetramine; Grain-boundary-passivation; Stability; DFT calculation; HIGH-PERFORMANCE; HIGH-EFFICIENCY; LIGHT; SCATTERING; ELECTRON; FILMS; DEPOSITION; BEHAVIOR; LENGTHS; LAYER;

D O I：

10.1016/j.jpowsour.2017.12.011

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Simultaneously achieving the long-term device stability and reproducibility has proven challenging in perovskite solar cells because solution-processing produced perovskite film with grain boundary is sensitive to moisture. Herein, we develop a hexamethylenetetramine (HMTA)-mediated one-step solution-processing deposition strategy that leads to the formation of high-purity and grain-boundary-passivation CH3NH3PbI3 film and thereby advances cell optoelectronic performance. Through morphological and structural characterizations and theoretical calculations, we demonstrate that HMTA fully occupies the moisture-exposed surface to build a bridge across grain boundary and coordinates with Pb ions to inhibit the formation of detrimental PbI2. Such HMTA-mediated grown CH3NH3PbI3 films achieves a decent augmentation of power conversion efficiency (PCE) from 12.70% to 17.87%. A full coverage of PbI2-free CH3NH3PbI3 surface on ZnO also boosts the device's stability and reproducibility.

引用

页码：103 / 109

页数：7

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