The case for nonporous low-k dielectrics

被引：0
|
作者：
Rantala, JT [1 ]
McLaughlin, W [1 ]
Reid, JS [1 ]
Beery, D [1 ]
Hacker, NP [1 ]
机构：
[1] Silecs Inc, San Jose, CA USA
来源：
SOLID STATE TECHNOLOGY | 2003年 / 46卷 / 12期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：34 / +
页数：2
相关论文
共 50 条
  • [21] Surface modification of porous low-k dielectrics
    Le, QT
    Whelan, CM
    Struyf, H
    Brongersma, SH
    Conard, T
    Boullart, W
    Vanhaelemeersch, S
    Maex, K
    THIN FILM MATERIALS, PROCESSES, AND RELIABILITY: PLASMA PROCESSING FOR THE 100 NM NODE AND COPPER INTERCONNECTS WITH LOW-K INTER-LEVEL DIELECTRIC FILMS, 2003, 2003 (13): : 206 - 215
  • [22] Porous low-k dielectrics: Material properties
    Tyberg, C
    Huang, E
    Hedrick, J
    Simonyi, E
    Gates, S
    Cohen, S
    Malone, K
    Wickland, H
    Sankarapandian, M
    Toney, M
    Kim, HC
    Miller, R
    Volksen, W
    Rice, P
    Lurio, L
    POLYMERS FOR MICROELECTRONICS AND NANOELECTRONICS, 2004, 874 : 161 - 172
  • [23] Role of Cu in TDDB of low-k dielectrics
    Lloyd, J. R.
    Ponoth, S.
    Liniger, E.
    Cohen, S.
    2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL, 2007, : 410 - +
  • [24] Thermal conductivity of ultra low-k dielectrics
    Delan, A
    Rennau, M
    Schulz, SE
    Gessner, T
    MICROELECTRONIC ENGINEERING, 2003, 70 (2-4) : 280 - 284
  • [25] Mechanical Stability of Porous Low-k Dielectrics
    Vanstreels, K.
    Wu, C.
    Baklanov, M. R.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 4 (01) : N3058 - N3064
  • [26] Low-k dielectrics characterization for Damascene integration
    Lin, S
    Jin, CM
    Lui, L
    Tsai, MS
    Daniels, M
    Gonzalez, A
    Wetzel, JT
    Monnig, KA
    Winebarger, PA
    Jang, S
    Yu, D
    Liang, MS
    PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2001, : 146 - 148
  • [27] Copper conductors vs low-K dielectrics
    不详
    INDUSTRIAL CERAMICS, 1999, 19 (03): : 212 - 213
  • [28] Integration of ultra low-k dielectrics for CMP
    Jew, S.
    Srivatsan, S.
    Ramanujam, K.Y.
    Jin, A.J.
    European Semiconductor Design Production Assembly, 2002, 24 (02): : 45 - 46
  • [29] Sealing porous low-k dielectrics with silica
    de Rouffignac, P
    Li, ZW
    Gordon, RG
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2004, 7 (12) : G306 - G308
  • [30] Plasma modification of porous low-k dielectrics
    Le, QT
    Whelan, CM
    Struyf, H
    Bender, H
    Conard, T
    Brongersma, SH
    Boullart, W
    Vanhaelemeersch, S
    Maex, K
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2004, 7 (09) : F49 - F53
12345