Structural and optical properties of N-doped β-Ga2O3 films deposited by RF magnetron sputtering

被引：50

作者：

Zhang, Yijun ^{[1
]}

Yan, Jinliang ^{[1
]}

Li, Qingshan ^{[1
]}

Qu, Chong ^{[1
]}

Zhang, Liying ^{[1
]}

Li, Ting ^{[1
]}

机构：

[1] Ludong Univ, Sch Phys, Yantai 264025, Peoples R China

来源：

PHYSICA B-CONDENSED MATTER | 2011年 / 406卷 / 15-16期

基金：

中国国家自然科学基金;

关键词：

RF magnetron sputtering; Transparent conductive oxide; Optical band gap; Post-annealed; N-doped beta-Ga2O3; LUMINESCENCE; ABSORPTION;

D O I：

10.1016/j.physb.2011.05.011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The N-doped beta-Ga2O3 films were grown on Si and quartz substrates by RF magnetron sputtering in different ammonia partial pressure ratios (from 0% to 30%). The influence of ammonia partial pressure ratios and annealing treatment on the optical and structural properties were studied. The micro-structure, optical transmittance, optical absorption and optical energy gap of the N-doped beta-Ga2O3 films are significantly changed with the increasing of ammonia partial pressure. The green, blue and ultraviolet emission bands are observed and discussed. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：3079 / 3082

页数：4

共 13 条

[1] Origin of the blue luminescence of β-Ga2O3 [J].

Binet, L ;

Gourier, D .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1998, 59 (08) :1241-1249

[2] SOME OBSERVATIONS ON LUMINESCENCE OF BETA-GA2O3 [J].

BLASSE, G ;

BRIL, A .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (04) :707-&

[3] Epitaxial ferromagnetic Fe3Si/Si(111) structures with high-quality heterointerfaces [J].

Hamaya, K. ;

Ueda, K. ;

Kishi, Y. ;

Ando, Y. ;

Sadoh, T. ;

Miyao, M. .

APPLIED PHYSICS LETTERS, 2008, 93 (13)

[4] Hydrogen passivation effect in nitrogen-doped ZnO thin films [J].

Li, XN ;

Keyes, B ;

Asher, S ;

Zhang, SB ;

Wei, SH ;

Coutts, TJ ;

Limpijumnong, S ;

Van de Walle, CG .

APPLIED PHYSICS LETTERS, 2005, 86 (12) :1-3

[5] CRYSTAL-STRUCTURE REFINEMENT OF AIN AND GAN [J].

SCHULZ, H ;

THIEMANN, KH .

SOLID STATE COMMUNICATIONS, 1977, 23 (11) :815-819

[6]

Shigeo O., 2008, THIN SOLID FILMS, V516, P5763

[7] Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal [J].

Suzuki, N. ;

Ohira, S. ;

Tanaka, M. ;

Sugawara, T. ;

Nakajima, K. ;

Shishido, T. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007, 4 (07) :2310-+

[8] Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements [J].

Takakura, K. ;

Koga, D. ;

Ohyama, H. ;

Rafi, J. M. ;

Kayamoto, Y. ;

Shibuya, M. ;

Yamamoto, H. ;

Vanhellemont, J. .

PHYSICA B-CONDENSED MATTER, 2009, 404 (23-24) :4854-4857

[9] OPTICAL ABSORPTION AND PHOTOCONDUCTIVITY IN BAND EDGE OF BETA-GA2O3 [J].

TIPPINS, HH .

PHYSICAL REVIEW, 1965, 140 (1A) :A316-&

[10] Floating zone growth of β-Ga2O3:: A new window material for optoelectronic device applications [J].

Tomm, Y ;

Ko, JM ;

Yoshikawa, A ;

Fukuda, T .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 66 (1-4) :369-374

← 1 2 →