Tuning photonic crystal fabrication by nanosphere lithography and surface treatment of AlGaN-based ultraviolet light-emitting diodes

被引:18
作者
Chee, Kuan W. A. [1 ,2 ,4 ]
Guo, Wei [2 ]
Wang, John R. [3 ]
Wang, Yong [4 ]
Chen, Yue-e [5 ]
Ye, Jichun [2 ]
机构
[1] Univ Nottingham Ningbo, Fac Sci & Engn, Dept Elect & Elect Engn, Ningbo 315100, Zhejiang, Peoples R China
[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
[3] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
[4] Shandong Acad Sci, Laser Res Inst, Shanyisuo Bldg,37 Miaoling Rd, Qingdao 226100, Shandong, Peoples R China
[5] Yanshan Univ, Coll Sci, Qinhuangdao 066004, Hebei, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
Photonic crystals; Ray tracing; Photoluminescence; Periodic nanostructures; Etching; Heat treatment; EXTERNAL QUANTUM EFFICIENCY; THIN-FILM; EXTRACTION EFFICIENCY; SPONTANEOUS EMISSION; ENHANCEMENT; GAN; PHOTOLUMINESCENCE; WELLS; BLUE; ALN;
D O I
10.1016/j.matdes.2018.08.058
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Photonic crystal processing was performed using nanosphere lithography as a low-cost procedure to enhance the quantum efficiency of AlGaN-based ultraviolet light emitting diodes. Spectral transmissivity/reflectivity and photoluminescence measurements, in conjunction with finite-element modeling and electromagnetic simulations, provide an indication of radiance enhancement with a photonic crystal periodicity comparable to the emission wavelength. To recondition the plasma-damaged sidewalls, post-processing methods based on high temperature annealing and surface treatment were evaluated, which in general, established a significant increase in light extraction efficiency. X-ray photoelectron spectroscopy clarified the formation of surface oxides and hydroxides on the as-fabricated nanostructures, and their dissolution after wet-chemical processing is linked to enhanced optical output. Hydroxyl-termination was found to prevail after KOH etching, but significantly reduced after HCl or H3PO4 treatment. The two-step sequence of HCl followed by KOH treatment provided the best quality nanotextured surface for optical emission in this study, as indicated by the nearly 14.5-fold enhancement in photoluminescence intensity. (C) 2018 Elsevier Ltd.
引用
收藏
页码:661 / 670
页数:10
相关论文
共 56 条
[1]  
[Anonymous], 2016, Atlas User's Manual
[2]   Electrical characterization of two deep electron traps introduced in epitaxially grown n-GaN during He-ion irradiation [J].
Auret, FD ;
Goodman, SA ;
Koschnick, FK ;
Spaeth, JM ;
Beaumont, B ;
Gibart, P .
APPLIED PHYSICS LETTERS, 1998, 73 (25) :3745-3747
[3]  
BIS Research, 2018, LED LIGHT EM DIOD MA
[4]   Spontaneous emission extraction and Purcell enhancement from thin-film 2-D photonic crystals [J].
Boroditsky, M ;
Vrijen, R ;
Krauss, TF ;
Coccioli, R ;
Bhat, R ;
Yablonovitch, E .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1999, 17 (11) :2096-2112
[5]   Fabrication of two-dimensional photonic crystal patterns on GaN-based light-emitting diodes using thermally curable monomer-based nanoimprint lithography [J].
Byeon, Kyeong-Jae ;
Hwang, Seon-Yong ;
Lee, Heon .
APPLIED PHYSICS LETTERS, 2007, 91 (09)
[6]   NATURAL LITHOGRAPHY [J].
DECKMAN, HW ;
DUNSMUIR, JH .
APPLIED PHYSICS LETTERS, 1982, 41 (04) :377-379
[7]   Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode [J].
Erchak, AA ;
Ripin, DJ ;
Fan, S ;
Rakich, P ;
Joannopoulos, JD ;
Ippen, EP ;
Petrich, GS ;
Kolodziejski, LA .
APPLIED PHYSICS LETTERS, 2001, 78 (05) :563-565
[8]   High extraction efficiency of spontaneous emission from slabs of photonic crystals [J].
Fan, SH ;
Villeneuve, PR ;
Joannopoulos, JD ;
Schubert, EF .
PHYSICAL REVIEW LETTERS, 1997, 78 (17) :3294-3297
[9]   Large-Area Nanosphere Self-Assembly by a Micro-Propulsive Injection Method for High Throughput Periodic Surface Nanotexturing [J].
Gao, Pingqi ;
He, Jian ;
Zhou, Suqiong ;
Yang, Xi ;
Li, Sizhong ;
Sheng, Jiang ;
Wang, Dan ;
Yu, Tianbao ;
Ye, Jichun ;
Cui, Yi .
NANO LETTERS, 2015, 15 (07) :4591-4598
[10]   Comparative study of etching high crystalline quality AlN and GaN [J].
Guo, W. ;
Xie, J. ;
Akouala, C. ;
Mita, S. ;
Rice, A. ;
Tweedie, J. ;
Bryan, I. ;
Collazo, R. ;
Sitar, Z. .
JOURNAL OF CRYSTAL GROWTH, 2013, 366 :20-25