Diffusion of Transition Metals in 4H-SiC and Trials of Impurity Gettering

被引：14

作者：

Danno, Katsunori ^{[1
]}

Saitoh, Hiroaki ^{[1
]}

Seki, Akinori ^{[1
]}

Shirai, Takayuki ^{[1
]}

Suzuki, Hiroshi ^{[1
]}

Bessho, Takeshi ^{[1
]}

Kawai, Yoichiro ^{[1
]}

Kimoto, Tsunenobu ^{[2
]}

机构：

[1] Toyota Motor Co Ltd, Higashifuji Tech Ctr, Shizuoka 4101193, Japan

[2] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 03期

关键词：

LEVEL TRANSIENT SPECTROSCOPY; TOTAL-ENERGY CALCULATIONS; WAVE BASIS-SET; SILICON-CARBIDE; DEFECT CENTERS; ACCEPTOR; VANADIUM; NITROGEN;

D O I：

10.1143/APEX.5.031301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The diffusion of transition metals in 4H-SiC has been investigated by secondary ion mass spectrometry using epilayers and substrates implanted with titanium (Ti), chromium (Cr), iron (Fe), or nickel (Ni). Implanted Cr, Fe, and Ni atoms diffuse by subsequent Ar annealing at 1780 degrees C in n-type 4H-SiC epilayers. In n(+) -type substrates, the diffusivities of Ti, Cr, and Fe are almost negligible, while only Ni diffuses. By the helium implantation following the implantation of transition metals, no diffusion of Ti, Cr and Fe is observed in epilayers. The diffusion of transition metals in SiC is discussed based on the results of first-principles calculation. (c) 2012 The Japan Society of Applied Physics

引用

页数：3

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