A Baseline for the Numerical Study of Sb2Se3 Absorber Material Based Solar Cell

Sb2Se3 antimony selenide is an alternate promising absorber material for the design and fabrication of thin film solar cell because of its optimal band gap, high absorption coefficient and good electrical properties. In recent years the maximum power conversion efficiency achieved from Sb2Se3 is about 6.5% with PbS as hole transport layer (HTL). In this article we model solar cell with structure ITO/ZnO/CdS/Sb2Se3/CNT in solar cell capacitance software (SCAPS) without HTL and Carbon Nano tube (CNT) as back electrode. CNT is used as a back electrode by replacing (Au, Ag) used for the fabrication of solar cell because it is not considered cost-effective for commercial application. We study the effect of CNT work function, absorber thickness, absorber acceptor doping concentration, buffer layer thickness, buffer layer donor doping concentration and defect in solar cell on performance parameters for Sb2Se3 solar cell. Based on the analysis the optimum power conversion efficiency (PCE) is achieved of 21.67% that is well near the Shockley Queisser limits for optimal band gap.