EuMnO3 Effects on Structure and Electrical Properties of Chemical Solution Deposited BiFeO3 Thin Films

被引：0

作者：

Do, D. ^{[1
]}

Kim, J. W. ^{[1
]}

Kim, G. H. ^{[1
]}

Bae, Y. R. ^{[1
]}

Kim, E. S. ^{[1
]}

Kim, S. S. ^{[1
]}

Lee, M. H. ^{[2
]}

Cho, H. J. ^{[2
]}

Cho, J. H. ^{[2
]}

Park, J. S. ^{[2
]}

Kim, D. J. ^{[2
]}

Sung, Y. S. ^{[2
]}

Kim, M. H. ^{[2
]}

Song, T. K. ^{[2
]}

机构：

[1] Changwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South Korea

[2] Changwon Natl Univ, Dept Convergence Mat Sci & Engn, Chang Won 641773, Gyeongnam, South Korea

来源：

2011 INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS (ISAF/PFM) AND 2011 INTERNATIONAL SYMPOSIUM ON PIEZORESPONSE FORCE MICROSCOPY AND NANOSCALE PHENOMENA IN POLAR MATERIALS | 2011年

基金：

新加坡国家研究基金会;

关键词：

co-doped BiFeO3 thin films; ferroelectric properties; leakage current; chemical solution deposition; FERROELECTRIC PROPERTIES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Multiferroic (Bi(1-x)Eux)(Fe1-xMnx)O-3 (BEFM-x, x=0.00, 0.02, 0.04, 0.06, 0.08, and 0.10) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Compared to the pure BiFeO3 thin film, improved ferroelectric property and reduced leakage current density were observed in the co-doped BEFM-x thin films. Among them, the BEFM-0.08 thin film capacitor showed the best properties. The values of remnant polarization (2P(r)) and coercive electric field (2E(c)) were 93 mu C/cm(2) and 531 kV/cm at an applied electric field of 932 kV/cm, respectively. The leakage current density of the BEFM-0.08 thin film capacitor was 2.5x10(-5) A/cm(2) at 100 kV/cm.

引用

页数：3

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