Molecular-beam epitaxy and robust superconductivity of stoichiometric FeSe crystalline films on bilayer graphene

被引：160

作者：

Song, Can-Li ^{[1
,2
]}

Wang, Yi-Lin ^{[1
]}

Jiang, Ye-Ping ^{[1
,2
]}

Li, Zhi ^{[1
]}

Wang, Lili ^{[1
]}

He, Ke ^{[1
]}

Chen, Xi ^{[2
]}

Ma, Xu-Cun ^{[1
]}

Xue, Qi-Kun ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100190, Peoples R China

[2] Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 02期

基金：

美国国家科学基金会;

关键词：

HIGH-TEMPERATURE SUPERCONDUCTIVITY; METAL;

D O I：

10.1103/PhysRevB.84.020503

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on molecular beam epitaxy growth of stoichiometric and superconducting FeSe crystalline thin films on double-layer graphene. Layer-by-layer growth of high-quality films has been achieved in a well-controlled manner by using Se-rich condition, which allow us to investigate the thickness-dependent superconductivity of FeSe. In situ low-temperature scanning tunneling spectra reveal that the local superconducting gap in the quasiparticle density of states is visible down to two triple layers for the minimum measurement temperature of 2.2 K, and that the transition temperature T(c) scales inversely with film thickness.

引用

页数：4

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