Zn2GeO4 and In2Ge2O7 nanowire mats based ultraviolet photodetectors on rigid and flexible substrates

被引：94
作者：
Liu, Zhe [1 ]
Huang, Hongtao
Liang, Bo
Wang, Xianfu
Wang, Zhuoran
Chen, Di
Shen, Guozhen
机构：
[1] HUST, WNLO, Wuhan 430074, Peoples R China
来源：
OPTICS EXPRESS | 2012年 / 20卷 / 03期
关键词：
OXIDE NANOWIRES; TRANSPARENT; NANOBELTS; FILMS;
D O I：
10.1364/OE.20.002982
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Ternary metal oxide, Zn2GeO4, In2Ge2O7, have potential applications in many research areas. Using a single chemical vapor deposition method, high-quality single crystalline Zn2GeO4 nanowire (NW) mats and In2Ge2O7 NW mats were synthesized on a large scale. Nanowires mats based ultraviolet photodetectors were fabricated on rigid silicon substrates. By simply transferring the nanowire mats to a transparent adhesive PET tape, flexible photodetectors were also fabricated. Both the rigid and flexible photodetectors exhibited excellent photoconductive performance in terms of high sensitivity to the UV light, excellent stability and reproducibility, and fast response and recovery time. (C)2012 Optical Society of America
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收藏
页码：2982 / 2991
页数：10
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