High precision optical characterization of semiconductor saturable absorber mirrors

被引：102

作者：

Maas, D. J. H. C. ^{[1
]}

Rudin, B. ^{[1
]}

Bellancourt, A. -R. ^{[1
]}

Iwaniuk, D. ^{[1
]}

Marchese, S. V. ^{[1
]}

Suedmeyer, T. ^{[1
]}

Keller, U. ^{[1
]}

机构：

[1] ETH, Inst Quantum Elect, Dept Phys, CH-8093 Zurich, Switzerland

来源：

OPTICS EXPRESS | 2008年 / 16卷 / 10期

关键词：

D O I：

10.1364/OE.16.007571

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Semiconductor saturable absorber mirrors (SESAMs) have become a key element of many ultrafast laser sources, enabling passively modelocked lasers with > 100 GHz repetition rate or with > 10 mu J pulse energy. Precise knowledge of the nonlinear optical reflectivity is required to optimize the SESAMs for self-starting passive modelocking at record high repetition rates or pulse energies. In this article, we discuss a new method for wide dynamic range nonlinear reflectivity measurements. We achieve a higher accuracy (<0.05%) with a simpler and more cost-efficient measurement scheme compared with previous measurement systems. The method can easily be implemented for arbitrary wavelength regions and fluence ranges. (C) 2008 Optical Society of America.

引用

页码：7571 / 7579

页数：9

共 16 条

[1] New regime of inverse saturable absorption for self-stabilizing passively mode-locked lasers [J].

Grange, R ;

Haiml, M ;

Paschotta, R ;

Spühler, GJ ;

Krainer, L ;

Golling, M ;

Ostinelli, O ;

Keller, U .

APPLIED PHYSICS B-LASERS AND OPTICS, 2005, 80 (02) :151-158

[2]

Haiml M, 2004, APPL PHYS B-LASERS O, V79, P331, DOI [10.1007/s00340-004-1535-1, 10.1007/S00340-004-1535-1]

[3] Q-switching stability limits of continuous-wave passive mode locking [J].

Hönninger, C ;

Paschotta, R ;

Morier-Genoud, F ;

Moser, M ;

Keller, U .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1999, 16 (01) :46-56

[4] Recent developments in compact ultrafast lasers [J].

Keller, U .

NATURE, 2003, 424 (6950) :831-838

[5] Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers [J].

Keller, U ;

Weingarten, KJ ;

Kartner, FX ;

Kopf, D ;

Braun, B ;

Jung, ID ;

Fluck, R ;

Honninger, C ;

Matuschek, N ;

derAu, JA .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1996, 2 (03) :435-453

[6]

Keller U., 2007, LANDOLTBORNSTEIN L 1, P33

[7] Passively modelocked surface-emitting semiconductor lasers [J].

Keller, Ursula ;

Tropper, Anne C. .

PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 2006, 429 (02) :67-120

[8] Compact Nd : YVO4 lasers with pulse repetition rates up to 160 GHz [J].

Krainer, L ;

Paschotta, R ;

Lecomte, S ;

Moser, M ;

Weingarten, KJ ;

Keller, U .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (10) :1331-1338

[9] 50-GHz passively mode-locked surface-emitting semiconductor laser with 100-mW average output power [J].

Lorenser, Dirk ;

Maas, Deran J. H. C. ;

Unold, Heiko J. ;

Bellancourt, Aude-Reine ;

Rudin, Benjamin ;

Gini, Emilio ;

Ebling, Dirk ;

Keller, Ursula .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2006, 42 (7-8) :838-847

[10] Vertical integration of ultrafast semiconductor lasers [J].

Maas, D. J. H. C. ;

Bellancourt, A.-R. ;

Rudin, B. ;

Golling, M. ;

Unold, H. J. ;

Suedmeyer, T. ;

Keller, U. .

APPLIED PHYSICS B-LASERS AND OPTICS, 2007, 88 (04) :493-497

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