Quantized acoustoelectric current in an InGaAs quantum well

被引：11

作者：

Astley, M. R. ^{[1
,2
]}

Kataoka, M. ^{[1
]}

Ford, C. J. B. ^{[1
]}

Barnes, C. H. W. ^{[1
]}

Godfrey, M. D. ^{[1
,2
]}

Farrer, I. ^{[1
]}

Ritchie, D. A. ^{[1
]}

Anderson, D. ^{[1
]}

Jones, G. A. C. ^{[1
]}

Pepper, M. ^{[1
,2
]}

Holmes, S. N. ^{[2
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] Toshiba Res Europe Ltd, Cambridge Res Lab, Cambridge CB4 0GZ, England

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 09期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2906330

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured the acoustoelectric current generated in a GaAs/Al0.33Ga0.67As heterostructure incorporating an In0.1Ga0.9As layer at the heterointerface. This wafer is designed to give a two-dimensional electron gas with a high electron g factor. We demonstrate that this wafer is of sufficient quality to produce quantized acoustoelectric current plateaus and has potential for future spintronic and quantum information technology applications. (C) 2008 American Institute of Physics.

引用

页数：3

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