Study of the lateral distribution of neodymium ions implanted in silicon

被引：1

作者：

Qin Xi-Feng ^{[1
]}

Li Hong-Zhen ^{[2
]}

Li Shuang ^{[1
]}

Liang Yi ^{[1
]}

Wang Feng-Xiang ^{[1
]}

Fu Gang ^{[1
]}

Ji Yan-Ju ^{[1
]}

机构：

[1] Shandong Jianzhu Univ, Coll Sci, Jinan 250101, Peoples R China

[2] Qufu Normal Univ, Coll Phys & Engn, Qufu 273165, Peoples R China

来源：

CHINESE PHYSICS B | 2011年 / 20卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Nd ion implantation; silicon; lateral distribution; Rutherford backscattering technique; PROJECTED RANGE; SI; LUMINESCENCE; PHOTOLUMINESCENCE; ERBIUM; ER3+;

D O I：

10.1088/1674-1056/20/8/086103

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Due to the need to reduce electronic device sizes, it is very important to consider the depth and lateral distribution of ions implanted into a crystalline target. This paper reports that Nd ions with energies of 200 keV to 500 keV and dose of 5x10(15) ions/cm(2) are implanted into Si single crystals at room temperature under the angles of 0 degrees, 30 degrees, and 45 degrees, respectively. The lateral spreads of 200 keV-500 keV Nd ions implanted in Si sample are measured by Rutherford backscattering technique. The results show that the measured values are in good agreement with those obtained from the prediction of SRIM2010 codes.

引用

页数：4

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